PART |
Description |
Maker |
D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS From old datasheet system
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Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] http://
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CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB154 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
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Continental Device India Limited
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CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264 2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A 2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP 2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ 2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ 2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q 2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q 2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P 2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A 2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P 2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
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Continental Device India Limited
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2N6488 |
Complementary Silicon Plastic Power Transistor(15A5W0V(集电极-发射极),补偿型,硅NPN功率晶体 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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ON Semiconductor
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CJD32C CJD31C |
SMD Bipolar Power Transistor PNP General Purpose Amplifier/Switch COMPLEMENTARY SILICON POWER TRANSISTOR From old datasheet system
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CENTRAL[Central Semiconductor Corp]
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CFB1063 CFB1063P CFD1499Q |
2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 200 hFE. Complementary CFD1499 2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 100 - 200 hFE. Complementary CFD1499P 2.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 120 hFE. Complementary CFB1063Q
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Continental Device India Limited
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MJ14001 MJ14003 MJ14002 ON1978 |
60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS 60 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AE 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS 60 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AE From old datasheet system
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Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
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TX14-80R-6ST-MH1 TX14-120R-6ST-MH1 TX14-70R-6ST-MH |
Small signal NPN transistor RECEPTACLE 1.27MM 120 WAY Complementary silicon power transistors RECEPTACLE 1.27MM 30 WAY RECEPTACLE 1.27MM 40 WAY RECEPTACLE 1.27MM 50 WAY NPN Darlington power module PLUG R/A 1.27MM 40 WAY RECEPTACLE R/A 1.27MM 40 WAY PLUG 1.27MM 40 WAY Complementary power transistors RECEPTACLE R/A 1.27MM 50 WAY RECEPTACLE R/A 1.27MM 30 WAY 插座1.27MM 30未来 道路40插座1.27MM LOW VOLTAGE NPN POWER TRANSISTOR 插头1.27MM 100未来
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Bourns, Inc.
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NTE275 NTE274 |
Silicon complementary PNP transistor. Darlington power apmlifier, switch. Silicon Complementary Transistors Darlington Power Amplifier, Switch
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NTE[NTE Electronics]
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2N5883 |
Complementary Silicon PNP Power Transistor(25A00W0V(集电极-发射极),补偿型PNP功率晶体 25 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
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ON Semiconductor
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MJE15032 MJE15033 ON2013 |
8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS COMPLEMENTARY SLLLCON PLASTLC POWER TRANSLSTORS From old datasheet system
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Motorola, Inc ONSEMI[ON Semiconductor]
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MJD128T4G MJD128 |
Complementary Darlington Power Transistor
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ONSEMI[ON Semiconductor]
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